Deadlines

Plenary Lecture

Molecular Beam Epitaxy:
From Quantum Wells to Quantum Dots
From Research to Mass Production


Professor Mohamed Henini
School of Physics and Astronomy
University of Nottingham
Nottingham NG7 2RD
England, UK
E-mail: mohamed.henini@nottingham.ac.uk


Abstract: Research on quantum wells, quantum dots, and superlattices has rapidly expanded during the past decade due to their potential applications in novel devices and their many unique physical properties. Molecular Beam Epitaxy, a sophisticated technology for the growth of high quality epitaxial layers of semiconductor materials, has played an important role in the study of low dimensional structures and devices (LDSD) and the development of the semiconductor electronics industry. The remarkable properties of LDSD make them an attractive candidate to develop semiconductor-based applications for exploitation in novel nanoelectronic and optoelectronic devices.
In this talk I will review the main achievements of Molecular Beam Epitaxy in fundamental research and manufacturing, provide an insight in the growth and properties of self-assembled quantum dots, and report on some new developments in novel material systems.

Brief Biography of the Speaker:
Mohamed Henini obtained his first degree at the University of Oran, Algeria. This was followed by a period of work as a Production Engineer for an electronic company (SONELEC) in Sidi Bel Abbes, Algeria . He came to Nottingham University and was awarded the PhD degree for research in Deep Level Transient Spectroscopy (DLTS) in 1984. He remained in the Electrical and Electronic Engineering Department as a Research Fellow in the area of Transmission Line Modelling (TLM). In September 1986 he transferred to the Physics Department where he is now Professor of Applied Physics. He has over 20 years of experience in Molecular Beam Epitaxy (MBE) growth. His particular speciality is the physics and technology of MBE growth for III-V electronic and optoelectronic devices. Over the years, he has made contributions to various aspects of III-V materials and devices for photonic and high speed electronic applications. He has been acknowledged as responsible for several "world firsts" in MBE growth. During the last few years he has achieved a further significant breakthrough producing new state-of-the-art materials containing quantum dots (QDs). He Ranked 1st (UK) and 14th (internationally) out of Top 25 Authors on QDs for the period 1992-2002 (ISI Essential Science Indicators; http://www.esi-topics.com/). He has authored and co-authored over 750 papers in international journals and conference proceedings. He is the founder of two international conferences namely, Low Dimensional Structures and Devices (LDSD) and Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces (ESPS-NIS). He edited four books which were published by Elsevier and serves on the Editorial Board of several scientific journals.

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